![1498185457381864.jpg P87PP{QQY]QX)06A@C1IKK3.jpg](../static/picture/1498185457381864.jpg)
Wafers are pieces of circular silicon chips made from pure silicon wafers (99.9999%) .
As the shapes are round, they are known as wafers.
NEXTECK provides two kinds of wafers : silicon wafers for semiconductors and silicon wafers for solar batteries.
Semiconductor wafers are measured from four to six inches. The specifications are as follows:
| Items | General Specification of Semiconductor Wafer | ||||||||
| 4 inch | 5 inch | 6 inch | |||||||
| Resistivity(Ω/cm) | P-Type doped: Boron, 0.001-0.01, 0.01-0.5, >0.5 P++, P+, P- | ||||||||
| N-Type doped: As, Phos, Sb, 0.001-1, 1-150 | |||||||||
| Diameter tolerance (mm) | ±0.2 | ±0.2 | ±0.2 | ||||||
| Orientation | (100), (111) | (100), (110), (111) | (100), (110), (111) | ||||||
| Orientation tolerance | ±0.15° | ±0.15° | ±0.15° | ||||||
| Edge Profile | T/R | T/R | T/R | ||||||
| Edge Condition | 11/22 Ground | 11/22 Ground | 11/22 Ground/Polished | ||||||
| Thickness(μm) | 300-650 | 400-650 | 550-750 | ||||||
| Thickness tolerance (μm) | ±15 | ±15 | ±15 | ||||||
| Backside Treatment | Etch | Poly | SiO2 | Etch | Poly | SiO2 | Etch | Poly | SiO2 |
| Bow(μm) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | |||
| Warp(μm) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | |||
| Options | Laser marking, Poly-back, SiO2 seal, Back side damage | ||||||||
NEXTECK provides monocrystalline silicons and polysilicons in solar energy level. Customized specifications are also supplied.
Below is some specifications of our 156mm Mono and Multi silicon wafers for your reference.
| Category | Mono silicon wafer | Multi wafer |
| 156*156mm(Mono wafer) | 156*156mm(Multi wafer) | |
| Growing method | CZ | |
| Type | P | P |
| Dopant | Boron | Boron |
| Crystal Orientation | <100>+/-3 deg | |
| Carbon content (atom/cm3) | <5*1016 | <5*1017 |
| Oxygen content (atom/cm3) | <1.1*1018 | <1*1018 |
| Etch Pit Defect (/cm3) | <=3000 | |
| Resistivity | 0.5~3/3~6 | 0.5~3 |
| Minority Carrier Lifetime (microsecond (μs) ) | >10 | >=2 |
| Dimension (mm) | 156+/-0.5 | 156+/-0.5 |
| Thickness (μm) | 200+/-20 | 200+/-20 |
| TTV (μm) | <=30 | <=30 |
| Bow/Warp (μm) | <100 | <50 / <100 |
| Edge (Chip) | Depth≤0.5mm | Depth≤0.5mm |
| Vertical≤1.0mm | Vertical≤3.0mm | |
| Defect≤2 | Defect≤2 |
Each items of NEXTECK win years of accumulation and trust. Products used for semiconductors and electronic parts are very completed and with varied shaping methods,excellent forming property and size precision.


